Abstract
Organic field-effect transistors (OFETs) have emerged as promising building blocks for artificial synapses owing to their low-power operation, mechanical flexibility, and compatibility with solution-processable fabrication techniques. In this work, a flexible and low-voltage OFET employing a carboxymethyl cellulose (CMC)-based dielectric layer is developed for neuromorphic electronics applications. The device exhibits stable transistor characteristics with a threshold voltage of −0.70 V and a memory window of approximately 1.1 V, indicating effective charge trapping and retention behavior. The synaptic performance of the OFET is investigated under electrical pulse stimulation, demonstrating key biological synaptic functions including excitatory and inhibitory post-synaptic current responses. Furthermore, the device successfully emulates important forms of synaptic plasticity such as paired-pulse facilitation (PPF), spike-voltage-dependent plasticity (SVDP), spike-duration-dependent plasticity (SDDP), and spike-rate-dependent plasticity (SRDP). Gradual and reversible conductance modulation during potentiation and depression processes highlights its capability to mimic learning and memory mechanisms found in biological neural networks. The device maintains reliable operation under mechanical bending conditions, confirming its suitability for flexible and wearable neuromorphic systems. These results demonstrate that CMC dielectric-based OFETs are promising candidates for next-generation low-power artificial synapses and flexible neuromorphic computing technologies.